| PART |
Description |
Maker |
| M2S56D20AKT M2S56D20ATP M2S56D30AKT M2S56D30ATP M2 |
256M Double Data Rate Synchronous DRAM
|
Elpida Memory
|
| M2S56D20TP M2S56D20TP-10 M2S56D20TP-75 M2S56D30TP- |
256M Double Data Rate Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M2S56D40ATP75A |
256M Double Data Rate Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HYB39S256160T |
256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4× 4M× 16)同步动态RAM)
|
SIEMENS AG
|
| M2S56D20TP M2S56D20TP-10 M2S56D20TP-75 M2S56D30TP- |
256M Double Data Rate Synchronous DRAM
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HYB39L256160AC HYB39L256160AC-8 HYB39L256160AT-7.5 |
Specialty DRAMs - 256M (16Mx16) 133MHz 3-3-3
256 MBit Synchronous Low-Power DRAM
|
Infineon Technologies AG
|
| M2S56D20TP-75 M2V56D30TP-75 M2V56D20TP-75 M2S56D30 |
128 x 64 pixel format, LED Backlight available
256M Double Data Rate Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| EDS2532EEBH-75-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Elpida Memory, Inc.
|
| HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
100PF50V_5%_NPO_,SM0603
CSM, CER 100PF 50V 5% 060
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| EM484M3244VBA-8FE EM484M3244VBA-75FE EM484M3244VBA |
256Mb (2MBank32) Synchronous DRAM
256Mb (2MBank2) Synchronous DRAM 256Mb的（200万?4Bank2）同步DRAM
256Mb (2M??Bank??2) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
